A Physically Based Analytical Modeling of Threshold Voltage Control for Fully-Depleted SOI Double Gate NMOS-PMOS Flexible-FET

摘要

In this work, we propose an explicit analytical equation to show thevariation of top gate threshold voltage with respect to the JFET bottom gatevoltage for a Flexible Threshold Voltage Field Effect Transistor (Flexible-FET)by solving 2-D Poisson's equation with appropriate boundary conditions,incorporating Young's parabolic approximation. The proposed model illustratesexcellent match with the experimental results for both n-channel and p-channel180nm Flexible-FETs. Threshold voltage variation with several important deviceparameters (oxide and silicon channel thickness, doping concentration) isobserved which yields qualitative matching with results obtained from SILVACOsimulations.